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L&T Semiconductor Technologies announced a 1,200 V silicon carbide MOSFET platform for EV fast chargers, traction inverters and other power systems. The company also introduced its first in-house SiC power modules and devices, plus a motor controller and connectivity modules; pricing, availability and performance specifications were not included in the source report.
L&T Semiconductor Technologies has unveiled a 1,200 V silicon carbide (SiC) MOSFET platform designed for EV fast chargers, traction inverters and other high-voltage power systems. The announcement also includes the company’s first in-house SiC power modules and devices, broadening its announced product range in power semiconductors.
The platform is intended for EV fast chargers, as well as traction inverters, microgrids and solid-state transformers, according to the source report from Charged EVs. The report says 1,200 V devices are commonly used in power stages for 800 V vehicle architectures and DC fast chargers. L&T Semiconductor Technologies, or LTSCT, is a wholly owned subsidiary of Larsen & Toubro.
The company’s wider product announcement includes its first in-house SiC power modules and devices, along with MOSFETs, diodes and bridge rectifiers. The source report does not identify individual device models or provide electrical specifications beyond the new platform’s 1,200 V rating. It also does not give production, availability or pricing details.
LTSCT also introduced a brushless DC motor controller that it describes as designed entirely in India, and four connectivity modules for smart metering, automotive applications and digital payments. These products were announced alongside the semiconductor range; the report does not describe their specifications or customers.
SiC Targets High-Voltage Charging
The platform targets power conversion systems where voltage handling, switching losses and heat affect equipment design. LTSCT says SiC MOSFETs can switch faster and with lower losses than silicon IGBTs at these voltage levels. In the company’s account, those characteristics can let designers reduce the size of magnetic components and cooling hardware.
For charger and vehicle-system designers, a 1,200 V rated device is relevant to power stages used with 800 V vehicle architectures and DC fast charging, as described in the source report. The possible design effects matter because they can influence the size and thermal management needs of power equipment. The announcement alone does not establish how much smaller or more efficient a system using these products would be; that would depend on product specifications and the surrounding design.
The announcement also shows LTSCT expanding beyond a single component category, with modules, discrete power devices and products for motor control and connectivity. That breadth may be relevant to companies evaluating suppliers, but the source does not report customer commitments, commercial production or adoption. Readers should treat the stated design advantages as the company’s description of SiC technology, not as independently measured results for this platform.
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Where 1,200 V Devices Fit
Silicon carbide is a semiconductor material used in power devices. LTSCT’s announcement focuses on MOSFETs rated at 1,200 V, a class the source says is commonly used in power stages for 800 V vehicle systems and DC fast chargers. The report places the platform among several intended applications, including traction inverters, microgrids and solid-state transformers; it does not say the device is limited to EV charging.
The source describes faster switching and lower losses relative to silicon IGBTs as general advantages of SiC MOSFETs at these voltages. It does not provide a platform-specific comparison, test conditions or measured performance figures. The announcement is therefore a product introduction, rather than evidence in the report of a completed vehicle integration, charger deployment or commercial order.
LTSCT is identified as a wholly owned subsidiary of Larsen & Toubro. The additional products announced at the same time—the motor controller and four connectivity modules—cover areas beyond power semiconductors. The report does not give a launch timeline for any of them or explain whether they are already available to customers.
Specifications and Launch Timing
The source report leaves several commercial and technical details open. It does not state when the platform will be available, where it will be manufactured, what it will cost or which customers might use it. It also provides no model numbers, current ratings, package options, efficiency measurements or reliability data for the announced MOSFETs and modules.
The company’s comparison with silicon IGBTs is not accompanied by test results or a defined operating scenario in the source material. The claimed potential to reduce magnetics and cooling hardware is a design implication, not a reported measurement for a specific charger or vehicle. It is also unclear whether the motor controller and connectivity modules are at the same stage of development as the SiC products.
Commercial Details Awaited
The next useful information for prospective customers would be datasheets, model-level specifications and availability dates for the 1,200 V platform and associated devices. Details about manufacturing, pricing, sample access and customer qualification would help show when the products could enter charger or vehicle programs. None of those milestones is provided in the source report.
Until LTSCT releases further product information or announces customer deployments, the confirmed development is the product unveiling and its stated target applications. The performance and size benefits described by the company remain unquantified for this platform in the available report.
Key Questions
What did L&T Semiconductor Technologies announce?
It unveiled a 1,200 V SiC MOSFET platform and a wider range that includes its first in-house SiC power modules and devices, MOSFETs, diodes and bridge rectifiers.
What is the 1,200 V platform designed for?
The announced target applications include EV fast chargers, traction inverters, microgrids and solid-state transformers. The source says 1,200 V devices are commonly used in power stages for 800 V vehicle architectures and DC fast chargers.
What advantages does the company cite for SiC MOSFETs?
LTSCT says they switch faster and with lower losses than silicon IGBTs at these voltage levels. It says this can let designers reduce magnetic components and cooling hardware, but the source gives no platform-specific measurements.
When will the products be available?
The source report does not give availability dates, pricing or production details. Those commercial details remain unclear.
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